Non‐Surgical, In‐Stent Membrane Bioelectronics for Long‐Term Intracranial Pressure Monitoring

This image shows a sequence of long-term intracranial pressure monitoring using non-surgical, in-stent membrane bioelectronics.

Abstract

Traditional intracranial pressure (ICP) monitoring methods, using intraventricular catheters, face significant limitations, including high invasiveness, discrete data, calibration complexities, and drift issues, which hinder long-term and stable monitoring. Here, a non-surgical, in-stent membrane bioelectronic system is presented for continuous and reliable ICP monitoring. This platform integrates a capacitive thin-film sensor with a stent, enabling precise real-time detection of pressure fluctuations directly within the dural venous sinus without requiring skull penetration or frequent recalibration. The sensor demonstrates a high sensitivity of 0.052%/mmHg and a broad, readable pressure range of 3–30 mmHg while maintaining calibration-free and drift-free performance. A series of in vivo studies highlight the system's superior sensitivity, rapid sampling rate, and long-term stability compared to conventional microcatheters. Statistical analyses reveal a strong agreement between the device and clinical reference, underscoring its potential to revolutionize ICP monitoring. These advancements pave the way for broader clinical applications, minimizing complications and improving patient outcomes in neurocritical care.